Abstract

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 μs using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.

Highlights

  • A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons

  • The diamond was fabricated by microwave (MW) plasmaassisted chemical vapour deposition (CVD), polished to 5 mm thickness and thinned to B200 nm using a combination of chlorine- and oxygen-reactive ion etching (Methods)

  • NV-nanocavity system B lies in the strong Purcell regime with b 1⁄4 0.54, which would lead to a B800-fold increase in entanglement generation rates between two distant NVs compared with present schemes without cavity enhancement, assuming the same collection efficiency as in previously reported experiments[20] (Supplementary Note 4)

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Summary

Introduction

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. We report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 ms using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks. No spin coherence measurements have been reported on single-crystal diamond cavities, leaving unverified the potential of NV-cavity systems as quantum memories

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