Abstract

We describe how stimulated Raman adiabatic passage (STIRAP) can be applied to create spectral holes in an inhomogeneously broadened system. Due to the robustness of STIRAP, our proposal guarantees high flexibility and accuracy and, at variance with traditional spectral hole burning techniques, it may require substantially less time resources since it does not rely upon the spontaneous decay of an intermediate excited state. We investigate the effects on the scheme of dephasing and dissipation as well as of unintentional driving of undesired transitions due to a finite splitting of the initial and target state. Finally, we show that the pulses can be reversed to create narrow absorption structures inside a broad spectral hole, which can be used as qubits for precise quantum operations on inhomogeneously broadened few-level systems.

Highlights

  • We have seen a surge of interest in utilizing solid state dopants like rare earth ions in crystals [1,2,3,4], nitrogen vacancy (NV) centers in nanodiamonds [5, 6] and quantum dots in nanoscale semiconductors [7] for quantum operations

  • Such a reversed stimulated Raman adiabatic passage (STIRAP) protocol can be used to isolate well-defined ions which may serve as qubits within a broad ensemble

  • IV, we introduce and characterize a reversed STIRAP process which returns the population to |1 for a selected frequency range

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Summary

INTRODUCTION

We have seen a surge of interest in utilizing solid state dopants like rare earth ions in crystals [1,2,3,4], nitrogen vacancy (NV) centers in nanodiamonds [5, 6] and quantum dots in nanoscale semiconductors [7] for quantum operations. Such a reversed STIRAP (rSTIRAP) protocol can be used to isolate well-defined ions which may serve as qubits within a broad ensemble.

PHYSICAL SYSTEM
Three-level model
STIRAP scheme
Adiabaticity and optimal time delay
HOLE BURNING
Spectral hole profile
Effects of decay and dephasing
Effects of off-resonant cross coupling
Reversed STIRAP
Isolation profiles
OUTLOOK
Full Text
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