Abstract

Atomic structure of hetero-interfaces such as semiconductor/oxide is recently much interested from the viewpoints of the device engineering as well as the interface science. Studies of the interface structures have been performed by transmission electron microscopy (TEM)[1], large-angle convergent beam electron diffraction[2] in the cross-sectional observation mode, and by X-ray diffraction[3], TEM[4] and CBED[5] in the plan-view mode. In the present study we applied a coherent convergent beam electron diffraction (c-CBED) technique to the analysis of the rigid-body shift between vacuum-deposited PbTe and MgO (001) thin crystals in the plan-view mode. The c-CBED technique was originated in nano-diffraction experiments by Cowley[6] and the theoretical analysis by Spence[7]. These results suggested a possibility of direct structure-phase determination from the interference fringes formed at coherent overlaps between the diffraction disks. This technique has been recently revived using TEM on SiC by Vine et al.[8] The present study is the first to be concerned with the analysis of interference fringes in c-CBED patterns from epitaxially grown bi-crystals[9].

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