Coherent growth of β-(Al x Ga1−x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD

Abstract

Herein, we demonstrate β-(Al x Ga1−x )2O3 thin films that were coherently grown on a (010) β-Ga2O3 substrate using mist chemical vapor deposition (CVD). X-ray diffraction and reciprocal space mapping results revealed that the β-(Al x Ga1−x )2O3 thin films were of high-crystalline quality and were grown coherently to attain an Al content of 18.3% as measured by Rutherford backscattering spectroscopy. Importantly, based on their surface morphologies, the coherently grown β-(Al x Ga1−x )2O3 thin films have atomically flat surfaces. These results indicate that mist CVD is a promising technique for β-(Al x Ga1−x )2O3/β-Ga2O3 heterojunction devices.