Abstract
Electrodynamics of the semiconductor band edge is governed by a set of constitutive equations which are a direct generalization of the quasispin Bloch equations for two level atoms. The band edge model yields a closed set of equations for the following quantities: Electromagnetic fields, valence band and conduction band carrier distributions and a coherent exciton wave function. Conceptual peculiarities of the band edge model are the occurrence of macroscopic coherence in electron-hole configuration space and the saturation of paired excitons by the unpaired densities. Special solutions of the band edge model that have been studied so far are related to the following phenomena: 1. Resonances and Landau decay of bulk exciton polaritons; 2. Formation of an exciton free surface layer in reflection experiments; 3. Band edge resonance of the nonlinear susceptibility x(3); 4. Self induced transparency of pulsed exciton polaritons; 5. Resonant Raman Scattering by phonons and plasmons.
Published Version
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