Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO x /Au Resistive Memory Devices

S Roy, B Chakrabarti + Show 1 more

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https://doi.org/10.1109/ted.2023.3305580

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Journal: IEEE Transactions on Electron Devices	Publication Date: Oct 1, 2023
Citations: 3	License type: cc-by

Abstract

Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO<sub> <i>x</i> </sub>/Au Resistive Memory Devices

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