Abstract
In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO2/SS thin film metal–insulator–metal device. The voltage-induced resistive switching leads to clockwise and counter-clockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I–V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO2/SS metal–insulator–metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.
Highlights
Resistive random access memory (RRAM) technology gained tremendous interest in the last few years as a future solution for the memory, logic, and computing applications [1,2,3,4]
The first mode represents clockwise switching (CCWS), the second mode represents clockwise switching (CWS), and simultaneous CCWS and CWS were observed in the third mode
The non-zero I–V crossing locations and crossover hysteresis loops suggested that the developed device has memristive and meminductive properties
Summary
Resistive random access memory (RRAM) technology gained tremendous interest in the last few years as a future solution for the memory, logic, and computing applications [1,2,3,4]. The device structure of memristor is very similar to metal–insulator–metal (MIM) type and offers a lot of advantages in terms of footprint, speed, and power consumption [9]. Different kinds of materials were used as an active layer; the oxide-based RRAM is popular due to the fast switching performance, higher endurance and retention, lower footprint, and CMOS compatibility [10]. In such devices, the resistive switching (RS) mechanism was governed by either homogeneous or filamentary type. In the case of homogeneous RS, the current is distributed homogeneously across the active layer, whereas formation and
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