Coexistence of ferromagnetic-antiferromagnetic ground state, exchange bias effect and bandgap narrowing in Cr-doped ZnO nanocrystals derived by simple chemical method.

Abstract

A detailed investigation of the structural, optical and magnetic properties of Cr-doped ZnO nanostructures obtained via a simple chemical method has been carried out. The structural study using X-ray powder diffraction indicates the hexagonal wurtzite structure for undoped ZnO and ZnO doped with 1% Cr, whereas the appearance of a secondary cubic phase (ZnCr2O4) is witnessed with the incorporation of Cr content ≥3% in the ZnO compounds. Furthermore, the secondary phase is observed to increase systematically with the increase of the Cr concentration. Field emission scanning electron microscopy and high-resolution transmission electron microscopy studies indicate cuboid, hexagonal and rod-type structural morphology in all the nanocrystals. The presence of the cubic structure along with the hexagonal structure is further confirmed from the selected area electron diffraction pattern. Raman spectroscopy has been used to study the crystalline quality, defects and disorder present in the host lattice. UV-visible spectra were obtained to study the effect of Cr doping on the optical absorption and hence to determine the bandgap, and show a decrease in bandgap with increasing Cr concentration. PL spectra show near-band-edge emission along with visible emission, which decreases with a higher concentration of Cr-doped nanocrystals. X-ray photoelectron spectroscopy analysis indicates the incorporation of Cr3+ and Cr2+ ions in the ZnO lattice. Detailed magnetic studies reveal the co-existing ferromagnetic (FM) and antiferromagnetic (AFM) ground states, which result in the observation of an exchange bias (EB) effect in all the doped compounds. The observation of an EB effect arises from the coupling between the FM and AFM components in the Cr-containing ZnO nanocrystals, and provides a way to design new principles and materials platform that are useful for futuristic spintronic devices.