Abstract
AbstractWe studied highly localized states of germanium and silicon impurities in GaAs. Hall effect and resistivity measurements as a function of hydrostatic pressure up to 1.5 GPa and temperature ranging from 4.2 up to 300 K were performed on highly doped LEC GaAs:Ge, Te and LEC GaAs:Si, Te. For Ge impurities our data confirm the two‐electron character of GeDX states and evidence that the GeA1 state does not reveal any metastable features down to liquid helium temperature. In the case of Si impurities we analyzed Hall concentration and Hall mobility dependencies on pressure and illumination in order to investigate the coexistence of DX and A1 states.
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