Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

Lin Yang,Lin-An Yang,Taotao Rong,Yang Li,Yue Hao,Zhi Jin

doi:10.1109/access.2019.2923210

Abstract

In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology. To improve the small-signal performance and the power-handling capability of the limiter-LNA, the improvement of the PIN-limiter circuit structure and the survivability of the LNA network are proposed. In addition, the total chip area is 2.5 mm × 1.2 mm with an equalizer integrated on chip behind the limiter-LNA to improve the bandwidth with a minimum impact on overall NF. The measurements show that the proposed limiter-LNA with only two-stage limiter structure tolerates up to 38 dBm continuous wave (CW) input power without failure, and the average gain and the noise figure for the limiter-LNA are 17 dB and 2.2 - 2.6 dB, respectively, on the 30 - 38 GHz frequency bandwidth.

Highlights

The advancement in wireless communication technology has urged the demand of millimeter-wave integrated circuits
Monolithic Microwave Integrated Circuits (MMICs) based on GaAs pHEMT technology can provide the possibility of limiter-low noise amplifier (LNA) integration and achieve a better performance due to the elimination of external connections and wired interconnections [2], in which Schottky diodes are commonly used for the limiter circuits due to an easy monolithic integration
We report a Ka-band integrated PIN-diode based limiter-LNA based on the combined PIN/0.15-μmpHEMT technology

Summary

Introduction

The advancement in wireless communication technology has urged the demand of millimeter-wave integrated circuits. LNAs and limiters are usually connected externally, which occupy a large area and induce high insertion loss, especially in millimeter-waveband applications. Monolithic Microwave Integrated Circuits (MMICs) based on GaAs pHEMT technology can provide the possibility of limiter-LNA integration and achieve a better performance due to the elimination of external connections and wired interconnections [2], in which Schottky diodes are commonly used for the limiter circuits due to an easy monolithic integration. It is reported a 34-36 GHz limiter with a power handling of 28.9 dBm CW power, which achieves an insertion loss of 4 dB [3].

Methods

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Conclusion