Cobalt-Activated Transfer-Free Synthesis of the Graphene on Si(100) by Anode Layer Ion Source

Greta Bener,Andrius Vasiliauskas,Vitoldas Kopustinskas,Mindaugas Andrulevičius,Šarūnas Meškinis,Asta Guobienė

doi:10.3390/pr10020272

Abstract

In this research, the graphene was grown directly on the Si(100) surface at 600 °C temperature using an anode layer ion source. The sacrificial catalytic cobalt interlayer assisted hydrocarbon ion beam synthesis was applied. Overall, two synthesis process modifications with a single-step graphene growth at elevated temperature and two-step synthesis, including graphite-like carbon growth on a catalytic Co film and subsequent annealing at elevated temperature, were applied. The growth of the graphene was confirmed by Raman scattering spectroscopy and X-ray photoelectron spectroscopy. The atomic force microscopy and scanning electron microscopy were used to study samples’ surface morphology. The temperature, hydrocarbon ion beam energy, and catalytic Co film thickness effects on the structure and thickness of the graphene were investigated. The graphene growth on Si(100) by two-step synthesis was beneficial due to the continuous and homogeneous graphene film formation. The observed results were explained by peculiarities of the thermally, ion beam, and catalytic metal activated hydrocarbon species dissociation. The changes of the cobalt grain size, Co film roughness, and dewetting were taken into account.

Highlights

Graphene has received significant interest due to the exciting combination of its properties and numerous applications [1,2]
The graphene formed on the Co film atomic force microscopy and scanning electron microscopy
The graphene formed on the Co film and and graphene synthesized on the Si(100) substrate were investigated to check the for‐

Summary

Introduction

Graphene has received significant interest due to the exciting combination of its properties and numerous applications [1,2]. The most often used graphene synthesis method is chemical vapor deposition on copper [3], nickel [4], or cobalt foils [5]. Afterward, fabricated graphene flakes are transferred to the final dielectric or semiconductor substrate necessary for an electronic device or sensor applications. Direct synthesis of graphene on targeted substrates is beneficial. It can be done by combining catalytic copper, nickel, or cobalt films deposited on the dielectric or semiconductor surfaces with physical vapor deposited amorphous carbon films and subsequent high-temperature annealing

Methods

Results

Conclusion