Abstract
We present the key results of multiple dark current (DC) characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at low and room temperature. This gives us the opportunity to discuss the relevance on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and the limited effects of electron displacement damage on dark current.
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