Abstract

A novel low-energy ion scattering spectrometer, in which an ion source and an energy analyzer are arranged coaxially so that the experimental scattering angle is just 180°, has been constructed. This mode of low-energy ion scattering spectroscopy, which we call coaxial impact-collision ion scattering spectroscopy (CAICISS), has several advantages. For example, CAICISS is suitable for in situ observation of various surface processes (e.g., epitaxial film growth at semiconductor surfaces) because of its geometrical simplicity. Preliminary experiments using the CAICISS apparatus have been made for a Au/Si(111) surface.

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