Abstract
Thin films of yttrium oxide phosphor doped with trivalent europium ion (Y2O3:Eu3+) are grown on a quartz fabric substrate by using electron beam evaporation (EBE) and subsequently annealed by a pulsed CO2 laser with different lengths of pixel time and resolutions. Energy distribution of the laser beam on the thin films is analyzed, and the dependence of surface morphology, crystal structure and luminescent properties of the resultant fabrics on the laser annealing parameters is also studied. The experimental results demonstrate that the microstructure and luminescent properties of the Y2O3:Eu3+ thin films are strongly affected by the CO2 laser annealing, and the increased emission brightness can be realized in the thin films because of the complete melting film with relatively integral topography and the improved crystallinity by controlling the CO2 laser parameters. The highest luminescence is obtained when the Y2O3:Eu3+ thin films are annealed with a resolution of 35 dpi and a pixel time for 120 μs, and the luminescent intensity of the films is increased by 253.27% in comparison to the as-deposited films.
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