Abstract
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.
Highlights
An increasing demand for monitoring and curbing pollutant emissions is a major reason for developing and improving electrical devices as cost-efficient gas sensors
SiC-based depletion-type metal insulator semiconductor field effect transistor (MISFET) devices were processed from 4H-SiC wafers, for which the gate metal/oxide material was deposited by the reactive DC magnetron cosputtering of Pt and Al (IAl = 200 mA, IPt = 450 mA)
The measured sensor responses to 100–1000 ppm Carbon monoxide (CO) during two identical test runs conducted at four different O2 concentrations and a sensor operation temperature of 500 °C were recorded
Summary
An increasing demand for monitoring and curbing pollutant emissions is a major reason for developing and improving electrical devices as cost-efficient gas sensors. By applying a gate contact material capable of interacting with the gaseous substance of interest to metal insulator semiconductor field effect transistor (MISFET) devices, cost-efficient gas sensors can be realized.
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