Abstract
A systematical thermodynamic analysis on the co-deposition of TaC and SiC via the chemical vapor deposition (CVD) is performed using the TaCl5-SiCl4-CH4-H2 system as the representative precursors system to guide experiments. The optimal deposition window for co-depositing TaC and SiC and tailoring their ratio is determined. The results show that temperature and pressure have limited influence on the content of TaC but mainly affect the mole fraction of SiC and graphite at equilibrium. CH4/(TaCl5 + SiCl4) ratios between 0.5 and 0.85 and H2/(TaCl5 + SiCl4) ratios of >5 favor the formation of the two-phase region of TaC + SiC. Medium temperatures (1000–1400 °C) are conducive to the co-deposition of TaC and SiC. Other condensed species will deposit at CH4/(TaCl5 + SiCl4) ratios below 0.6. By adjusting the ratios of CH4/(TaCl5 + SiCl4) and SiCl4/TaCl5, the mole fractions of TaC in the deposit can be regulated.
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