Abstract
Thin Co films were fabricated by DC magnetron sputtering. The effect of argon pressure on the microstructure, surface morphology and magnetic properties of the samples was systematically studied. It was found that with the increase of argon pressure, the sharpness of the crystalline texture of the samples declines, the roughness of film surfaces and the coercivity of the films increase. Based on these results, a Co/Cu/Co pseudo spin-valve system was designed and the corresponding structures were fabricated. The difference in coercivity of magnetic layers was obtained by deposition of the Co layers at different Ar pressures. Change of the resistance of this trilayer is induced at a moderate field by the spin rotation in the soft layer with lower coercivity.
Highlights
In past years, spin-valve devices have been employed for various applications: measurements of electrical current, high-density magnetic recording heads, position sensing applications, non-volatile magnetic random access memories
We study the effect of argon pressure on structure and magnetic properties of Co thin films and a Co/Cu/Co pseudo spin-valve system prepared on their basis
Structural characteristics and magnetic properties of thin Co films prepared by magnetron sputtering were studied
Summary
Spin-valve devices have been employed for various applications: measurements of electrical current, high-density magnetic recording heads, position sensing applications, non-volatile magnetic random access memories. The electrical resistance of a spin-valve increases with the change of the angle between the magnetizations of the reciprocal magnetic layers from a parallel to an antiparallel alignment (giant magnetoresistance (GMR)) [2]. GMR can be observed in simpler systems which consist of two magnetic layers separated by a nonmagnetic spacer – so-called pseudo spin-valve system [3,4,5].
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