Abstract
This paper proposes a low power design of 4-input ternary XOR function using carbon nano tube field effect transistors (CNTFETs). In CNTFET, the desired threshold voltage can be achieved by setting the diameter of CNTs. Based on this unique property of CNTFET, the proposed XOR gate is designed utilizing multi-diameter CNTs for multi threshold structure. The direct implementation of ternary XOR function at the transistor level reduces the number of transistors drastically. The proposed design is simulated using HSPICE simulator with 32nm Stanford CNTFET model. The simulation results shows that at 0.9V power supply voltage, the proposed design consumes 74% less power (or 69% less energy) in comparison with the existing conventional CNTFET based 4-input ternary XOR circuit.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
