Abstract
A detailed simulation of the CMS pixel sensor is described. The simulation incorporates: a physical model of charge deposition; a realistic electric field map; a realistic carrier transport including mobilities, Hall effect, and 3-d diffusion; radiation damage and charge trapping effects; and finally, electronic noise, response, and threshold effects. The simulation agrees well with published measurements of the average Lorentz angle in irradiated pixel detectors and suggests that limited electronic dynamic range improves detector performance by suppressing large delta-ray induced fluctuations.
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