Abstract
The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon–germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration.
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