Abstract
Complementary metal-oxide-semiconductor (CMOS) technology has been combined with thin silicon on sapphire films (SOS) for the fabrication of shift registers designed for full TTL compatibility d.c. storage capability, 20 MHz operating frequency, single phase clock and data inputs, and double rail data outputs. Typical power dissipation levels were on the order of 500 nW per stage during standby and 250 /spl mu/W per stage when operating at 20 MHz.
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