Abstract
Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only now starting to make their way into high energy physics. Two major requirements are radiation tolerance and low power consumption. For the most extreme radiation levels, signal charge has to be collected by drift from a depletion layer onto a designated collection electrode without losing the signal charge elsewhere in the in-pixel circuit. Low power consumption requires an optimization of Q/C, the ratio of the collected signal charge over the input capacitance [1]. Some solutions to combine sufficient Q/C and collection by drift require exotic fabrication steps. More conventional solutions up to now require a simple in-pixel readout circuit. Both high voltage CMOS technologies and Monolithic Active Pixel Sensors (MAPS) technologies with high resistivity epitaxial layers offer high voltage diodes. The choice between the two is not fundamental but more a question of how much depletion can be reached and also of availability and cost. This paper tries to give an overview.
Highlights
Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only starting to make their way into high energy physics
Monolithic pixel detectors have only been adopted in two high energy physics experiments: the Depleted P- Channel Field Effect Transistor (DEPFET) [2] pixels in Belle-II [3] and Monolithic Active Pixel Sensors (MAPS) in STAR [4]
Monolithic detectors are not yet installed in the Large Hadron Collider or LHC, but they are considered for upgrades, for the ALICE ITS upgrade and for detectors in new accelerators like the Compact Linear Collider (CLIC) and International Linear Collider (ILC)
Summary
Monolithic detectors offer advantages in terms of detector assembly, production cost and detector capacitance, and are promising for pixel detectors and for full tracking detectors. Monolithic pixel detectors have only been adopted in two high energy physics experiments: the Depleted P- Channel Field Effect Transistor (DEPFET) [2] pixels in Belle-II [3] and MAPS in STAR [4]. In both cases the readout is relatively slow (row by row), which is not always applicable. Apart from the non-ionizing radiation, the inner layers of future detector upgrades will be exposed to a very severe ionizing radiation environment (up to several hundred Mrad), typically affecting the CMOS readout circuitry more than the sensor This will favor smaller linewidth technologies with thinner gate oxides. In [9] the PMOS of minimum size shows significant current drive degradation which cannot be attributed to its radiation induced threshold voltage shift alone
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