Abstract

The integrated differential ring oscillator (DRO) in complementary metal oxide semiconductor (CMOS) technology has been used in numerous products for a long time. Its presence has been extended to high-speed clock and data recovery (CDR) circuits for optical communication, analog and digitally controlled oscillators, frequency dividers of high-frequency synthesizers, clock generators of digital circuits, analog-to-digital converters (ADCs), and many more applications [1]-[5]. Implementations of these ring oscillators are seen in emerging technologies such as ultrawideband (UWB) and radio frequency identification (RFID) as well as wireless sensor networks (WSNs) and short-range communication devices [6], [7]. The DRO is a good design choice for integrated circuit (IC)designers because of its continued use in different bulk CMOS technologies. This article presents implementation techniques and performance comparisons of the DRO as a CMOS voltage-controlled oscillator (VCO) in low radio frequency (RF) bands, along with presentation and discussion of a number of circuit approaches.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.