Abstract
MESFET devices provide high breakdown characteristics, enable high voltage operation, and direct battery hook-up with no changes in processing on state of the art SOI and SOS CMOS processes. Fundamental analog building blocks, including single-ended and differential amplifiers and high impedance current mirror were designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. The measured breakdown voltage of the SOS MESFETS presented here has a breakdown voltage of over 7.5 V without causing irreversible damage. DC characteristics were measured by varying the power supply from 2.5 to 5.5 V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within plusmn5% for the current from 0 to 1.5 mA with the power supply from 2.5 to 5.5 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
