Abstract
This work describes an idea of implementing differential amplifier for enhancing the sensitivity of NMOS current mirror readout circuitry based piezoresistive pressure sensor. The complete pressure sensing structure along with differential amplifier consists of five n-channel MOSFETs which were designed and simulated using five micron CMOS technology parameters in T-Spice software for a drain current of 1 mA. The NMOS current mirror circuit has three n-channel MOSFET. MOSFET M1 of current mirror circuit acts as a reference transistor whereas MOSFET M2 and M3 act as the pressure sensing transistor. The pressure sensing MOSFETs M2 and M3 are embedded on a flexible square silicon diaphragm to sense both tensile and compressive stresses induced under an externally applied pressure. An n-channel MOSFET based differential amplifier consist of two MOSFETs M4 and M5 in common source configuration has been used to enhance the pressure sensitivity by amplifying the output voltage. The piezoresistivity in n-channel MOSFET has been studied for the calculation of carrier mobility variation in the channel region MOSFET under uniformly applied externally pressure. The pressure sensitivity of current mirror readout circuit based pressure sensor enhances from 783 mV/MPa to 1638 mV/MPa by using n-channel MOSFET based differential amplifier circuit.
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