CMOS based variable gain LNA at V-Band

Abstract

Recent advancements in semiconductor technologies supports high data rate communications in V-band. Particularly 60 GHz encourages short range multi Gbps transmission suitable for multimedia applications. The first block of the receiver, Low Noise Amplifier (LNA) should have high gain requirements simultaneously maintaining low noise Figure (NF). This work consists of designing Variable Gain (VG) LNAs over the desired bandwidth (57–64) GHz in the V – Band. Variable loads formed by active devices are used to change body transconductance of amplifying transistor. It is found that better tuning range of 19.23 dB/V is achieved with lower noise Figure of 1. 4SSdB for PMOS variable load LNA. Almost 3.57 GHz bandwidth is achieved with figure-of-the-merit (FOM) of >S in all LNAs.