Abstract
Comparative studies of the emission of Sin+(n = 1–11) cluster ions and impurity-containing polyatomic ions under bombardment of B-doped single crystal silicon with Am−(m = 1–5) cluster ions with an energy of E0 = 6–18 keV are carried out. The peculiarities of sputtering an adsorbed-particle layer with cluster ions are revealed. The possibility of determining the depth distribution of adsorbed particles by analyzing the yield of sputtered heteroatomic molecular ions upon bombardment is demonstrated.
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Schedule a callMore From: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
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