Abstract
Two heat-and-mass transfer models are considered as applied to modeling of crystallization from melts in zero gravity, i.e., the cluster hydrodynamic and integral viscosity increase models which take into account the additional melt flow drag force near the phase interface. It was shown that the consideration of this force is required to correctly describe the anomalous impurity distributions in semiconductor single crystals grown under conditions of orbital space flight. The advantages of the first model were indicated. A new efficient method for solving ill-conditioned systems of finite-difference elliptic equations was developed. Calculations of experimental benchmarks with phase transition showed good agreement between calculated and experimental results.
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