Abstract
A new class of RF switches have been developed by MIT Lincoln Laboratory in the US. The single chip high-performance vertically stacked switches are based on a wafer-scale 3D integration technology, and have a footprint that is much smaller than in conventional 2D switches. The approach, which is fully compatible with the standard Si CMOS process, could also be used for other types of circuit such as amplifiers, signal processors and imagers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
