Abstract

The integrated clock data recovery (CDR) circuit is a key element for broad band optical communication systems at 40 Gb/s. We report a 40Gb/s CDR fabricated in Indium-Phosphide heterojunction bipolar transistor (InP HBT) technology using the more robust architecture of a phase lock loop with a digital early-late phase detector. The faster (compared to SiGe) InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This in turn reduces the circuit complexity (transistor count) and VCO requirements. The integrated IC includes an on-chip LC VCO and on-chip clock dividers to drive an external DEMUX and low frequency PLL control loop. On-chip limiting amplifier buffers are included for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed signal IC operating at the clock rate of 40 GHz. We describe the chip architecture and measurement results.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call