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Abstract
Climb of dislocation dipoles within GaAs during electron beam irradiation has been observed by high resolution transmission electron microscopy. In particular, 90° Shockley partials of α - and β -type forming part of a faulted dipole climbed through absorption of interstitials, with the β -partial showing a greater extent of climb for the same conditions of irradiation. Dislocation climb initiated with the formation of perfect dislocation loops located on the partial dislocations.
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