Abstract
The fabrication and operation of the first cleaved-coupled-cavity (C3) semiconductor lasers with large cavity length ratios are described. The internal cleaved facet is precisely positioned by photochemically etching a groove through most of the wafer. Single longitudinal mode operation is obtained over a temperature range of 21 °C and over a current range of threshold to greater than four times threshold. Sidemode suppression of 100:1 was measured when the laser was modulated at 350 MHz with an extinction ratio greater than 10:1. These results are experimentally and theoretically compared to approximately equal length C3 lasers.
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