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Abstract
Cathodoluminescence spectroscopy studies of III–V compound semiconductor surfaces and their metal interfaces show that the optical emission of deep‐level surface and interface states depend on semiconductor‐surface morphology. Spatially resolved measurements reveal metal‐induced interface states at cleavage steps whose optical emission properties depend on electron‐beam injection level. The density and spatial distribution of such metal‐cleavage‐related states may account for variation in electronic measurements reported for clean III–V compound semiconductor/metal interfaces.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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