Abstract
Three chemical cleaning procedures for InSb(111) wafers were studied. X-ray photoelectric spectroscopy, and scan electron microscope were used to assess their credibility for use in manufacturing the InSb detectors. It is shown, a suitable thermal treatment can remove In oxide and Sb oxide and therefore, all procedures approach to similar results from this point of view. But undulation and peel-like features has been observed on InSb(111) surface etched by all etchants except a modified CP4A etchant (HNO 3 :CH 3 COOH:HF:H 2 O at 2:1:1:10). Also control the etch rate and etching process can be done better in CP4A than the others. The XPS results show different spectra for SbO x and InO x when, InSb(111) is compared with InSb(100) and it means that, for different crystal orientation and different etchant there are different cleaning method for removing SbO x and InO x . Finally the effect of etchants on the performance of InSb detectors was shown.
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