Abstract
We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
