Abstract
In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μm) of InAs/In 0.25 Ga 0.75 As quantum dots (QDs) epitaxially grown on Ge substrate by solid-source molecular beam epitaxy (MBE) is reported. By hybrid III- V/IV epitaxial growth, ultra-thin and anti-phase domains (APD) free III-V materials are achieved on Ge substrate. Step-graded InGaAs metamorphic buffer layers are applied to reduce the strain in InAs QDs in order to extend the emission wavelength. At last, a high quality InAs/In 0.25 Ga 0.75 As QD structure on Ge(001) substrate is obtained, which has a strong C/L-band emission centered at the wavelength of 1.6 μm with a full-width- half-maximum (FWHM) of 57 meV at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
