Abstract
Copper indium selenium (CIS) and copper indium gallium selenium (CIGS) thin films were prepared by co-sputtering. The crystal structure, surface morphology and composition ratio were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy disperse spectroscopy (EDS). It was shown that the chalcopyrite structure CIS thin films were obtained by sputtering CuIn and Se targets and further optimized by changing the substrate or annealing temperature. The chalcopyrite structure, good surface morphology and proper stoichiometric ratio for the CIGS thin films were obtained by sputtering CuIn, CuGa and Se targets, which are solid groundwork to get CIGS solar cells with high efficiency.
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