Abstract
A circular ferroelectric tunnel junction (C-FTJ) is proposed for a larger memory window and better endurance than a conventional planar FTJ (P-FTJ). The electrical characteristics of the proposed C-FTJ are evaluated compared with a conventional P-FTJ by using device simulation. It is confirmed that C-FTJs have more excellent ferroelectric switching than P-FTJs because the electric field becomes more concentrated across the ferroelectric layer. Also, C-FTJs show better endurance because the electric field applied to the interfacial layer is alleviated.
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