Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell

Abstract

SEU is studied in a 90 nm SRAM cell with different simulation approaches. The SRAM cell main SEU parameters (maximum current peak, collected charge, threshold LET) are extracted and compared. It is shown that the simulation conditions have a direct impact on the cell behavior and so on the SEU prediction. Moreover, not accounting for voltage variations induced by the particle generation in the circuit results in an overestimation of struck drain current.