Abstract
Circuits with transistors using independently controlled gates have been designed to reduce the number of transistors and to increase the logic density per area. This paper proposed a full adder and substractor circuit with novel Vertical Slit Field Effect Transistor and unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. With the help of double gate transistor, some of the used parameters value has been varied significantly thus improving its performance quality. Double gate transistor circuit is the first choice for low power application domain as well as used in Radio Frequency (RF) devices.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call