Abstract
To meet the existing needs of the domestic market of radio electronic equipment in high-speed wideband operational amplifiers, it was previously proposed to use the MH2XA031 master slice array containing complementary bipolar transistors, together with the developed circuits of the OAmp9 high-speed operational amplifier and the OAmp10 precision operational amplifier with unified cascades and the ability to program parameters such as current consumption, maximum output current, bandwidth, slew rate. The article discusses the increase in the performance of these operational amplifiers by reducing the parasitic collector capacitance of transistors by applying a reverse bias voltage to OAmp9 and using correction circuits in OAmp10, which made it possible to increase the output voltage slew rate by 29 % in the first case and 3.1 times in the second. The electrical circuits and the results of circuit simulation of the upgraded amplifiers, called OAmp9M, OAmp10M, are presented, which are respectively characterized by a zero offset voltage of 0.35 and 0.03 mV, a voltage gain of 2.7 · 103 and 3 · 105, the gain bandwidth product 161 and 68 MHz, output voltage slew rate 708 and 64.5 V/µs.
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