CIGS 태양전지 버퍼층으로의 활용을 위한 인듐설파이드의 전기화학적 합성

Abstract

CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling tem- perature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and dif- fraction method we confirmed that β-indium sulfide was formed on ITO electrode surface.