Abstract
Si-Cr reactions were obtained by annealing Si/Cr(130 nm) samples with 25 keV, 50 ns electron beam pulses at current fluences of 950 and 1000 A cm -2. Thin layers of the silicide CrSi 2, 100 nm and 110 nm thick respectively, were formed at the Si-Cr interface. The thickness and composition of the reacted layers are not influenced by successive electron beam pulses of current density 950 A cm -2
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