Abstract
Narrow (∼100 nm) ribbon-shaped chromium lines were formed along steps of a Si substrate. The width and height of this self-aligned ribbon was well controlled by Cr layer thickness and the step geometry, respectively. The process sequence and its influence on the ribbon profile were presented. Relatively high resistance values were found but the process yield was good. A negative temperature coefficient of resistance of −0.5% K −1 was related to an internal structure of the ribbon.
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