Abstract
Growth of chromium-doped, semi-insulating InP by metal-organic vapour phase epitaxy is described. Both hexacarbonyl chromium and bis-benzene chromium are shown to be efficient Cr precursors. The purity, structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3 × 10 16 cm −3 is reported with resistivity as high as 3 × 10 8 Ω cm. It is further shown that when Cr-doped InP is employed as a current blocking layer in buried heterostructure lasers, improved performance may be obtained compared with similar iron containing structures.
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