Abstract
Chlorine assisted selective area epitaxy is a new technique allowing perfect selective growth on masked substrates, even at atmospheric pressure. Carbon tetrachloride (CCl 4) is used to prevent the growth of polycrystalline InP by etching the crystal surface. The investigation of this etching process during metalorganic vapor phase epitaxy (MOVPE) was a part of this study. Particular attention was paid to the possible incorporation of carbon and chlorine in InP. Comparisons were made between conventionally grown InP layers and chlorine assisted InP grown layers. Another point of interest was the influence of CCl 4 on the incorporation of silicon and zinc using diethylzinc and disilane as dopant sources. The side effects of CCl 4 on the optical and electrical properties were also investigated.
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