Abstract
Chloride-based growth on on-axis SiC substrates has been studied at higher temperature than typical CVD conditions. The use of chlorinated precursors allows to grow homo-polytypic layers and to achieve high growth rates for thick layers deposition. In this study a vertical reactor with the gas flow inlet at the bottom has been used to grow layers up to 1.5 mm thick. Thanks to the addition of hydrogen chloride (HCl) to the standard precursors mixture, growth rates up to 300 μm/h have been achieved at a process temperature lower than 1900 °C. Very pure layers, micropipe free, and with a low background doping have been grown on 4H and 6H-SiC carbon and silicon-face, respectively, on-axis 3” diameter substrates. The results obtained indicates that this process has the potential to become a novel bulk growth technique at lower temperature than usual, which could give several advantages.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
