Abstract
The quantum anomalous Hall effect in thin film magnetic topological insulators (MTIs) is characterized by chiral, one-dimensional conduction along the film edges when the sample is uniformly magnetized. This has been experimentally confirmed by measurements of quantized Hall resistance and near-vanishing longitudinal resistivity in magnetically doped (Bi,Sb)2Te3. Similar chiral conduction is expected along magnetic domain walls, but clear detection of these modes in MTIs has proven challenging. Here, we intentionally create a magnetic domain wall in an MTI, and study electrical transport along the domain wall. In agreement with theoretical predictions, we observe chiral transport along a domain wall. We present further evidence that two modes equilibrate while co-propagating along the length of the domain wall.
Highlights
The recent prediction[1] and subsequent discovery[2] of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional magnetic topological insulator (MTI) (CryBixSb1−x−y)2Te3 has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field
Like the ν = 1 quantum Hall (QH) system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film
The QAH system is topologically classified by the Chern number C = ±1, corresponding to upwards or downwards magnetization, respectively
Summary
The recent prediction[1] and subsequent discovery[2] of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional magnetic topological insulator (MTI) (CryBixSb1−x−y)2Te3 has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. To create a domain wall, the MTI film is first fully magnetized downwards Mz 1⁄4 MSzC 1⁄4 À1 with a large external field. The boundary of a niobium cylinder overlaps all four etched regions to form a magnetic domain wall connecting them.
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