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https://doi.org/10.1002/chin.199037341
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Cite Journal: ChemInform |  Publication Date: Sep 11, 1990 |
Affiliation: IBM (United States)
AbstractULSI (ultra large scale integration) quality silicon epitaxial films are grown in a commercially available cylindrical epi reactor at temp. as low as 850 °C and pressures as low as 10 torr using Si2H6 as silicon source.
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