Abstract
AbstractGe3Sb2Te5Se (I) is prepared by heating the elements in a molar ratio of Ge:Sb:Te:Se = 7:2:5:5 (SiO2 glass ampule, 950 °C, 1 h; annealing at 400 °C, 4 d) followed by chemical vapor transport using I2 as transport agent (evacuated silica tubes, 428→378 °C, 42 h).
Published Version
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